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| New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) () 0.060 at VGS = - 10 V 0.077 at VGS = - 4.5 V ID (A)d - 19 - 16.8 Qg (Typ) 26 FEATURES * TrenchFET(R) Power MOSFET * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * High Side Switch for Full Bridge Converter * DC/DC Converter for LCD Display TO-252 S G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C TC = 125 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit - 60 20 - 18.3 - 8.19 - 30 - 22 24.2 38.5 c Unit V A mJ W C 2.3b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on TC = 25 C. t 10 s Steady State Symbol RthJA RthJC Typical 17 45 2.7 Maximum 21 55 3.25 Unit C/W Document Number: 69253 S-72191-Rev. A, 22-Oct-07 www.vishay.com 1 New Product SUD19P06-60 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 60 V, VGS = 0 V VDS = - 60 V, VGS = 0 V, TJ = 125 C VDS = - 60 V, VGS = 0 V, TJ = 150 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 10 A, TJ = 125 C VGS = - 10 V, ID = - 10 A, TJ = 150 C VGS = - 4.5 V, ID = - 5 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time c c a Symbol Test Conditions Min - 60 -1 Typ Max Unit V -3 100 -1 - 50 - 125 V nA A A - 30 0.048 0.060 0.102 0.120 0.061 22 0.077 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf C)b IS ISM VSD trr VDS = - 15 V, ID = - 10 A S 1140 VGS = 0 V, VDS = - 25 V, f = 1 MHz 130 90 26 VDS = - 30 V, VGS = - 10 V, ID = - 10 A f = 1 MHz VDD = - 30 V, RL = 3 ID - 19 A, VGEN = - 10 V, Rg = 2.5 4.5 7.0 7.0 8 9 65 30 1710 pF 40 nC 15 15 100 45 ns Timec Drain-Source Body Diode and Characteristics (TC = 25 - 30 - 30 IF = - 19 A, VGS = 0 V IF = - 19 A, di/dt = 100 A/s - 1.0 41 - 1.5 61 A V ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69253 S-72191-Rev. A, 22-Oct-07 New Product SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 VGS = 10 thru 5 V 25 ID - Drain Current (A) 4V ID - Drain Current (A) 25 30 20 20 15 15 10 3V 10 TC = 125 C 5 25 C - 55 C 5 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 35 30 g fs - Transconductance (S) 25 20 15 10 5 0 0 5 10 15 20 25 30 125 C TC = - 55 C 25 C rDS(on) - On-Resistance () 0.12 Transfer Characteristics 0.10 0.08 VGS = 4.5 V 0.06 VGS = 10 V 0.04 0.02 0.00 0 5 10 15 20 25 30 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance 1800 20 On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 1500 C - Capacitance (pF) Ciss 16 VDS = 30 V ID = 10 A 1200 12 900 8 600 300 Crss 0 10 4 Coss 0 0 20 30 40 50 60 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 69253 S-72191-Rev. A, 22-Oct-07 Gate Charge www.vishay.com 3 New Product SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 1.9 ID = 10 A r DS(on) - On-Resistance I S - Source Current (A) 1.6 (normalized) VGS = 10 V 1.3 10 TJ = 150 C TJ = 25 C 1.0 0.7 0.4 - 50 1 - 25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 25 100 Limited by rDS(on)* 20 I D - Drain Current (A) I D - Drain Current (A) 10 100 ms 1s 1 10 s DC 0.1 BVDSS Limited TC = 25 C Single Pulse 15 10 5 0.01 0 0 25 50 75 100 125 150 TC - Case Temperature (C) 0.001 0.1 * VGS 1 10 100 1000 Maximum Drain Current vs. Case Temperature 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 69253 S-72191-Rev. A, 22-Oct-07 SUD19P06-60 Vishay Siliconix THERMAL RATINGS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69253. Document Number: 69253 S-72191-Rev. A, 22-Oct-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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